Optimal process parameters for phosphorus spin-on-doping of germanium
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DOI: 10.1016/j.apsusc.2016.09.134
Abstract: Abstract The fabrication of homogeneously doped germanium layers characterized by total electrical activation is currently a hot topic in many fields, such as microelectronics, photovoltaics, optics and radiation detectors. Phosphorus spin-on-doping technique has been implemented… read more here.
Keywords: optimal process; spin doping; diffusion; germanium ... See more keywords