Investigation of gating effect in Si spin MOSFET
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DOI: 10.1063/1.5131823
Abstract: A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant electric current. An unprecedented reduction in… read more here.
Keywords: spin; voltage; spin mosfet; spin accumulation ... See more keywords