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Published in 2020 at "Nano Research"
DOI: 10.1007/s12274-020-2832-7
Abstract: In this work, we have fabricated a single layer graphene spin transistor on SiO2/Si with a semiconducting tri-layer MoS2 as the tunneling barrier between the ferromagnetic electrodes and the graphene channel. The spin transport in…
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Keywords:
spin transistor;
spin;
gate;
tunneling barrier ... See more keywords
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Published in 2017 at "Scientific Reports"
DOI: 10.1038/srep46671
Abstract: In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite.…
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Keywords:
complementary spin;
spin;
spin transistors;
spin transistor ... See more keywords