Improvement mechanism of sputtered AlN films by high-temperature annealing
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.09.002
Abstract: Abstract The improvement mechanism of sputtered AlN films by high temperature annealing in nitrogen ambient has been investigated. Sputtered AlN films were annealed at 1100–1700 °C and their microstructures were observed by scanning transmission electron microscopy.… read more here.
Keywords: temperature; aln films; improvement mechanism; films high ... See more keywords
Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/38/11/113003
Abstract: High-quality AlN layers with low-density threading dislocations are indispensable for high-efficiency deep ultraviolet light-emitting diodes (UV-LEDs). In this work, a high-temperature AlN epitaxial layer was grown on sputtered AlN layer (used as nucleation layer, SNL)… read more here.
Keywords: quality; layer; high yield; sputtered aln ... See more keywords