Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy.
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DOI: 10.1364/ol.42.001608
Abstract: A high-quality Ge0.88Si0.08Sn0.04/Ge0.94Sn0.06 multiple quantum well (MQW) structure was grown on a Ge (001) substrate by sputtering epitaxy. The MQW structure was characterized by high-resolution x-ray diffraction and transmission electron microscopy. Surface-illuminated Ge0.88Si0.08Sn0.04/Ge0.94Sn0.06 MQW pin… read more here.
Keywords: sub sub; multiple quantum; ge1; sub ... See more keywords