Power-aware sourse feedback single-ended 7T SRAM cell at nanoscale regime
Sign Up to like & getrecommendations! Published in 2019 at "Microsystem Technologies"
DOI: 10.1007/s00542-017-3570-y
Abstract: This article presents a low power and highly stable source feedback SE7T (single-ended 7T) SRAM cell. Using Monte-Carlo simulations critical design metrics of proposed SE7T SRAM cell are estimated and the estimated results are compared… read more here.
Keywords: single ended; power; feedback; sram cell ... See more keywords
Design of SRAM cell for low power portable healthcare applications
Sign Up to like & getrecommendations! Published in 2020 at "Microsystem Technologies"
DOI: 10.1007/s00542-020-04809-6
Abstract: Biomedical applications such as body area networks (BANs) require the design of power-efficient SRAM cells for the extended battery lives of BAN sensor nodes. In this work, we have proposed a bit-interleaving supporting, robust, low-power… read more here.
Keywords: fd8t; power; sram cell; design sram ... See more keywords
A Schmitt-trigger based low read power 12T SRAM cell
Sign Up to like & getrecommendations! Published in 2020 at "Analog Integrated Circuits and Signal Processing"
DOI: 10.1007/s10470-020-01718-6
Abstract: In this article, a Schmitt trigger based 12-Transistors(ST12T) static random-access memory (SRAM) bit-cell has been proposed. The Read Power of proposed cell is reduced by 29.17%/ 24.14% /7.66% /5.87% /7.67% /16.62% when compared to 6T/… read more here.
Keywords: read power; sram cell; cell; schmitt trigger ... See more keywords
A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-019-01327-1
Abstract: This paper presents a novel low-leakage and high-writable 8T SRAM cell based on FinFET technology. This cell reduces leakage current and consequently leakage power by dynamically adjusting the back gate of the stacked independent-gate FinFET… read more here.
Keywords: leakage high; sram cell; cell; high writable ... See more keywords
Low Power Consuming 1 KB (32 × 32) Memory Array Using Compact 7T SRAM Cell
Sign Up to like & getrecommendations! Published in 2017 at "Wireless Personal Communications"
DOI: 10.1007/s11277-017-4226-z
Abstract: Rapid increase in technology is showing a great perception in assessing the complexity of design that can be integrated on a single chip dramatically. Minimum feature sizes, low power consumption, minimum cost and high performance… read more here.
Keywords: array; sram; sram cell; low power ... See more keywords
Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications
Sign Up to like & getrecommendations! Published in 2021 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2021.153899
Abstract: Abstract The internet of things (IoTs)-based systems require battery-enabled energy-efficient memory circuits to operate at low voltage domain, especially below the transistor’s threshold. This study presents a single-ended 7T SRAM cell for IoTs applications. Cell… read more here.
Keywords: energy; sram cell; proposed sram; consumption ... See more keywords
Reliable and high performance asymmetric FinFET SRAM cell using back-gate control
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113545
Abstract: Abstract As the technology scales down, the performance characteristics are degraded and the reliability of digital circuits against soft error and aging effects are reduced. In this paper, we propose a reliable asymmetric FinFET 6T… read more here.
Keywords: asymmetric finfet; sram cell; back gate; finfet sram ... See more keywords
Design of an enhanced write stability, high-performance, low power 11T SRAM cell
Sign Up to like & getrecommendations! Published in 2021 at "International Journal of Electronics"
DOI: 10.1080/00207217.2020.1870738
Abstract: In the present era of diminishing technology nodes, stability and performance of SRAM cells deteriorate. To cope up with the above growing concerns, a new 11 T SRAM cell has been proposed which imp... read more here.
Keywords: sram; sram cell; performance; design enhanced ... See more keywords
Simulation based analysis of HK-Ge-Step-FinFET and its usage as inverter & SRAM
Sign Up to like & getrecommendations! Published in 2024 at "Physica Scripta"
DOI: 10.1088/1402-4896/ad5ecb
Abstract: This paper deals with comparative simulation of High-k dielectrics -Germanium Step FinFET (HK-Ge-Step-FinFET) device with reference Step FinFET. For the first time we have investigated the impact of various dimensional parameters like oxide thickness tox,… read more here.
Keywords: sram; inverter sram; noise margin; sram cell ... See more keywords
Design analysis of a low-power, high-speed 8 T SRAM cell using dual-threshold CNTFETs
Sign Up to like & getrecommendations! Published in 2024 at "Physica Scripta"
DOI: 10.1088/1402-4896/ad61ca
Abstract: Recently, carbon nanotube field-effect transistors (CNTFETs) have garnered significant attention from VLSI engineers due to their exceptional electrical properties. This paper proposes a novel high-speed, low-power eight-transistor (8 T) static random-access memory (SRAM) cell based… read more here.
Keywords: low power; high speed; sram; sram cell ... See more keywords
Design of dual port 9T SRAM cell with parallel processing and high performance computing
Sign Up to like & getrecommendations! Published in 2024 at "Physica Scripta"
DOI: 10.1088/1402-4896/ad69e8
Abstract: To meet industry requirements of higher transistor count SRAM cells this paper is proposing, a nine-transistor configuration static random access memory (SRAM) cell which is accessible by dual bit line and performing simultaneous read and… read more here.
Keywords: sram; performance; cell; sram cell ... See more keywords