Thermal stability and reliability studies of (Sr, Ca) AlSiN3:Eu2+ phosphors for LED application
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-017-7872-8
Abstract: In this paper, the thermal stability and reliability properties of (Sr, Ca) AlSiN3:0.05Eu2+ phosphors prepared by solid-state reaction in 1.1 MPa N2 atmosphere were studied. The internal quantum efficiency of (Sr, Ca) AlSiN3:0.05Eu2+ could reach as… read more here.
Keywords: reliability; intensity srxca1; thermal stability; stability reliability ... See more keywords
Radiation stability and reliability of Cu–ZnO/P3OT hybrid heterostructures under swift heavy ion irradiations
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.104885
Abstract: Abstract Hybrid heterostructures (HH's) were prepared by depositing conducting poly (3-octylthiophene) (P3OT) polymer and Cu-doped zinc oxide (Cu–ZnO) composites films onto indium-doped tin oxide (ITO) substrate using an ultra-sonication cast technique. The weight percentage (wt%)… read more here.
Keywords: zno; ion; stability reliability; radiation stability ... See more keywords
Stability and Reliability of Lateral GaN Power Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2931718
Abstract: GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications,… read more here.
Keywords: stability reliability; power; field effect; gan power ... See more keywords
Stability, Reliability, and Robustness of GaN Power Devices: A Review
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2023.3266365
Abstract: Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture, and physics of many GaN devices are significantly different from silicon and silicon carbide… read more here.
Keywords: stability reliability; gan power; power; reliability ... See more keywords