Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
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DOI: 10.1063/5.0015348
Abstract: In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is observed as a capacitance–voltage (C–V)… read more here.
Keywords: stack; hfo2 sio2; atomic layer; interface dipole ... See more keywords