Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique
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DOI: 10.3390/mi13020262
Abstract: An extraction method of the interface-trap densities (Dit) of the stacked bonding structure in 3D integration using high-frequency capacitance–voltage technique is proposed. First, an accurate high-frequency capacitance–voltage model is derived. Next, by numerically solving the… read more here.
Keywords: high frequency; bonding structure; capacitance voltage; stacked bonding ... See more keywords