3D Sidewall Integration of Ultrahigh‐Density Silicon Nanowires for Stacked Channel Electronics
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201800627
Abstract: Building 3D electronics represents a promising method for the integration of more functionalities into a given footprint. To this end, stacked multilevel silicon nanowires (SiNWs) are ideal multilevel channels to construct high‐density 3D electronics. 3D… read more here.
Keywords: integration; density; channel electronics; stacked channel ... See more keywords
Facile 3D integration of Si nanowires on Bosch-etched sidewalls for stacked channel transistors.
Sign Up to like & getrecommendations! Published in 2020 at "Nanoscale"
DOI: 10.1039/c9nr09000b
Abstract: Three-dimensional (3D) integration is a promising strategy to integrate more functions into a given footprint. In this work, we report on a convenient new strategy to grow and integrate high density Si nanowire (SiNW) arrays… read more here.
Keywords: channel transistors; facile integration; stacked channel; integration nanowires ... See more keywords
Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13122099
Abstract: Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by… read more here.
Keywords: stacked channel; ingazno thin; amorphous ingazno; double stacked ... See more keywords