Analytical drain current model of stacked oxide SiO2/HfO2 cylindrical gate tunnel FETs with oxide interface charge
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DOI: 10.1007/s12648-019-01535-2
Abstract: In this paper, we have developed an analytical drain current model of stacked oxide SiO2/HfO2 cylindrical gate tunnel field-effect transistor (CG TFET) by considering the effect of interface trap charge at Si–SiO2 interface nearby the… read more here.
Keywords: oxide sio2; model; sio2 hfo2; stacked oxide ... See more keywords