Deep Integration and Topological Cohabitation of Active Circuits and Antennas for Power Amplification and Radiation in Standard CMOS
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Microwave Theory and Techniques"
DOI: 10.1109/tmtt.2020.2997049
Abstract: In this article, a densely integrated and unified paralleled amplifier and antenna architecture is proposed and demonstrated for next-generation millimeter-wave (mmW) and terahertz (THz) front-end modules. It makes use of topologically paralleled transistors cohabitated within… read more here.
Keywords: deep integration; radiation; power; standard cmos ... See more keywords
High-performance one-dimensional MOSFET array photodetectors in the 0.8-µm standard CMOS process.
Sign Up to like & getrecommendations! Published in 2022 at "Optics express"
DOI: 10.1364/oe.475687
Abstract: This paper reports a series of novel photodetectors based on one-dimensional array of metal-oxide-semiconductor field-effect transistors (MOSFETs), which were fabricated using the standard 0.8-µm complementary metal oxide semiconductor (CMOS) process. Normally, the metal fingers of… read more here.
Keywords: cmos process; array; standard cmos; one dimensional ... See more keywords