Entropy Sources from Tunnelling in Standard CMOS Structures
Sign Up to like & getrecommendations! Published in 2024 at "Circuits, Systems, and Signal Processing"
DOI: 10.1007/s00034-024-02683-5
Abstract: Pseudo-random number generators are predominantly utilised as entropy sources in encryption and seeding processes, however, they are deterministic by nature. This paper presents the analysis and design methodology of an on-chip quantum noise source that… read more here.
Keywords: entropy sources; sources tunnelling; tunnelling standard; cmos structures ... See more keywords
Deep Integration and Topological Cohabitation of Active Circuits and Antennas for Power Amplification and Radiation in Standard CMOS
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Microwave Theory and Techniques"
DOI: 10.1109/tmtt.2020.2997049
Abstract: In this article, a densely integrated and unified paralleled amplifier and antenna architecture is proposed and demonstrated for next-generation millimeter-wave (mmW) and terahertz (THz) front-end modules. It makes use of topologically paralleled transistors cohabitated within… read more here.
Keywords: deep integration; radiation; power; standard cmos ... See more keywords
High-performance one-dimensional MOSFET array photodetectors in the 0.8-µm standard CMOS process.
Sign Up to like & getrecommendations! Published in 2022 at "Optics express"
DOI: 10.1364/oe.475687
Abstract: This paper reports a series of novel photodetectors based on one-dimensional array of metal-oxide-semiconductor field-effect transistors (MOSFETs), which were fabricated using the standard 0.8-µm complementary metal oxide semiconductor (CMOS) process. Normally, the metal fingers of… read more here.
Keywords: cmos process; array; standard cmos; one dimensional ... See more keywords