Robustness to ambipolarity and improvement to HF FOMs of dual-stacked-gate dielectrics underlap heterojunction TFETs
Sign Up to like & getrecommendations! Published in 2020 at "Indian Journal of Physics"
DOI: 10.1007/s12648-020-01821-4
Abstract: This work presents a new TFET architecture which not only diminishes ambipolar current (IAMB) but also shows high on state current (ION), high ratio of ION to IOFF, and less off-state current (IOFF). Initially, to… read more here.
Keywords: robustness ambipolarity; state current; ambipolarity improvement; ambipolarity ... See more keywords
A novel structure to enable low local electric field and high on-state current in GaN photoconductive semiconductor switches
Sign Up to like & getrecommendations! Published in 2021 at "Optics Communications"
DOI: 10.1016/j.optcom.2021.127133
Abstract: Abstract The use of GaN photoconductive semiconductor switches (PCSSs) is plugged by the high local electric field at the electrode edges and the low on-state current in the sub-bandgap triggering mode. Therefore, a new high-power… read more here.
Keywords: state current; electric field; structure; state ... See more keywords
Performance improvement of junctionless field effect transistors using p-GaAs/AlGaAs heterostructure
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.08.023
Abstract: Abstract The performance analysis of junctionless (JL) gate-all-around (GAA) metal oxide semiconductor field effect transistors (MOSFETs) is investigated using the Non-Equilibrium Green's Function (NEGF) formalism. The main problem of JL transistors is found to be… read more here.
Keywords: state current; gaas algaas; performance; effect transistors ... See more keywords
Study of metal strip insertion and its optimization in doping less TFET
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.06.046
Abstract: Abstract In this manuscript, a novel structure for dopingless tunnel field effect transistor (DL TFET) is introduced which comprises of metal strip (MS) in the oxide region near source/channel junction. Gate and drain work function… read more here.
Keywords: effect; metal strip; state current; threshold voltage ... See more keywords
Breakthrough in high ON-state current based on Ag–GeTe8 selectors
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Chemistry C"
DOI: 10.1039/c9tc06673j
Abstract: Selectors are crucial components for establishing high-density, massive, three-dimensional (3D) stackable novel non-volatile memory devices and neural networks. Although a lot of work has been done to develop new selectors, it is still considerably difficult… read more here.
Keywords: state current; high state; based gete8; current based ... See more keywords
Stretched tunnelling body contact structure for suppressing the FBE in a vertical cell DRAM
Sign Up to like & getrecommendations! Published in 2019 at "Electronics Letters"
DOI: 10.1049/el.2019.2541
Abstract: Vertical cell transistor is necessary to drastically reduce the chip size of the dynamic random access memory. This structure has a great advantage in terms of shrinkage, but it also has the disadvantage of increasing… read more here.
Keywords: state current; vertical cell; structure; stretched tunnelling ... See more keywords
The Investigation of an IGBT With Hole-Carrier Movement Control
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2859226
Abstract: A novel hole-controlled lateral-insulated-gate bipolar transistor (HC-LIGBT) device that is free of tail current is proposed and investigated. The device utilizes a poly-p-i-n-diode as the field plate to guarantee high breakdown voltage (BV) at the… read more here.
Keywords: state current; hole carrier; hole; movement ... See more keywords
A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2891751
Abstract: A scaling study of excess OFF-state current in planar InGaAs quantum-well MOSFETs is reported. We find that pure band-to-band tunneling (BTBT) dominates the drain OFF-state current in deviceswith channel length above $\sim 1~\mu \text{m}$ .… read more here.
Keywords: tex math; inline formula; state current;
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2023.3270259
Abstract: Silicon channel tunnel field-effect transistors (TFETs) are known to exhibit low ON-state current due to the wide indirect band gap. In this work, to achieve high ON-state current, we propose a Si TFET with an… read more here.
Keywords: dipole formation; formation layer; state current;
Investigating Heavy-Ion Effects on 14-nm Process FinFETs: Displacement Damage Versus Total Ionizing Dose
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3072886
Abstract: Bulk 14-nm FinFET technology was irradiated in a heavy-ion environment (42-MeV Si ions) to study the possibility of displacement damage (DD) in scaled technology devices, resulting in drive current degradation with increased cumulative fluence. These… read more here.
Keywords: state current; heavy ion; ionizing dose; ion ... See more keywords