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Published in 2024 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2162-8777/ad49d6
Abstract: This study investigated threshold voltage (VTH) instability in a Schottky p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) with a 1-µs pulse width in the ON-state and OFF-state. OFF-state drain…
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Keywords:
state drain;
threshold voltage;
gate algan;
state ... See more keywords