Chemical state of phosphorous at the SiC/SiO2 interface
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DOI: 10.1016/j.tsf.2019.02.038
Abstract: Abstract The chemical nature of sub-monolayer phosphorous impurities at the SiC/SiO2 interface is a critical surface science problem related to device performance and other applications. In this study, SiO2 films containing phosphorus were deposited by… read more here.
Keywords: sio2 interface; sic sio2; state phosphorous; phosphorus ... See more keywords