Investigation of the Crystallization Characteristics of Intermediate States in Ge2Sb2Te5 Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation
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DOI: 10.3390/nano12030536
Abstract: Laser pulses can be utilized to induce intermediate states of phase change materials between amorphous and crystalline phases, making phase change materials attractive and applicable for multi-level storage applications. In this paper, intermediate states of… read more here.
Keywords: ge2sb2te5 thin; thin films; multi; crystallization ... See more keywords