Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2017.2751065
Abstract: The rapid development of RF power electronics requires amplifier operating at high frequency with high output power. GaN-based HEMTs as RF devices have made continuous progress in the last two decades showing great potential for… read more here.
Keywords: self aligned; gan static; power; induction transistor ... See more keywords
Stacked Assembly of SiC Cascode Using Buried Gate Static Induction Transistor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Components, Packaging and Manufacturing Technology"
DOI: 10.1109/tcpmt.2020.3022083
Abstract: A 650-V and 10-A silicon carbide (SiC) stacked cascode assembly has been proposed and demonstrated, in which a low-voltage Si-MOSFET (LV Si-MOSFET) is stacked on a high-voltage SiC buried gate static induction transistor (HV SiC-BGSIT).… read more here.
Keywords: cascode; induction transistor; gate static; static induction ... See more keywords