Compact Analytical Model to Extract Write Static Noise Margin (WSNM) for SRAM Cell at 45-nm and 65-nm Nodes
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DOI: 10.1109/tsm.2017.2772341
Abstract: The operation of static random access memory (SRAM) in the subthreshold region reduces both leakage power and access energy. Subthreshold operation is one of the proficient techniques to accomplish low-power and high performance system on… read more here.
Keywords: noise margin; analytical model; sram; model ... See more keywords