Ultra‐Steep‐Slope High‐Gain MoS2 Transistors with Atomic Threshold‐Switching Gate
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202104439
Abstract: The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec−1, which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for… read more here.
Keywords: high gain; steep slope; mos2; mos2 transistors ... See more keywords
A Graphene‐Based Filament Transistor with Sub‐10 mVdec−1 Subthreshold Swing
Sign Up to like & getrecommendations! Published in 2018 at "Advanced electronic materials"
DOI: 10.1002/aelm.201700608
Abstract: DOI: 10.1002/aelm.201700608 gap structure cannot be able to integrate in vertical direction. In 2008, Salahuddin et al.[8] proposed negative capacitance transistor using the polarization change induced abrupt switch with steep slope (Figure 1b). But at… read more here.
Keywords: filament transistor; graphene; gate; steep slope ... See more keywords
Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400780
Abstract: A steep‐slope In‐Ga‐Zn‐O (IGZO) field‐effect transistor (FET) monolithically integrated with an Ag/Ti/Hf0.8Zr0.2O2 atomic threshold switch (ATS) device is presented, which allows switching below the Boltzmann limit of 60 mV dec−1 at room temperature (25 °C).… read more here.
Keywords: 2o2 atomic; slope igzo; monolithically integrated; 8zr0 2o2 ... See more keywords
Ferroelectric Nanogap-Based Steep-Slope Ambipolar Transistor.
Sign Up to like & getrecommendations! Published in 2022 at "Small"
DOI: 10.1002/smll.202203017
Abstract: The subthreshold swing (SS) of metal-oxide-semiconductor field-effect transistors is limited to 60 mV dec-1 at room temperature by the Boltzmann tyranny, which restricts the scaling of the supply voltage. A nanogap-based transistor employs a switchable nanoscale… read more here.
Keywords: nanogap based; transistor; ferroelectric nanogap; steep slope ... See more keywords
GIS-based soil erosion modelling under various steep-slope vineyard practices
Sign Up to like & getrecommendations! Published in 2020 at "Catena"
DOI: 10.1016/j.catena.2020.104604
Abstract: Abstract Soil erosion can cause a progressive degradation of hillslopes, especially in steep-slope agricultural landscapes. In this study, the formation of spatial erosion patterns was evaluated in three typical steep-slope vineyard cultivation practices in northern… read more here.
Keywords: slope vineyard; erosion; steep slope; soil ... See more keywords
Biomarkers in sedimentary sequences: Indicators to track sediment sources over decadal timescales
Sign Up to like & getrecommendations! Published in 2017 at "Geomorphology"
DOI: 10.1016/j.geomorph.2016.10.027
Abstract: Abstract Long-term sedimentary sequence research can reveal how human activities and climate interact to affect catchment vegetation, flooding, soil erosion, and sediment sources. In this study, a biomarker sediment fingerprinting technique based on n-alkanes was… read more here.
Keywords: source; biomarkers sedimentary; sediment; slope areas ... See more keywords
An Ultra-steep Slope Two-dimensional Strain Effect Transistor.
Sign Up to like & getrecommendations! Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c02194
Abstract: We introduce a high-performance and ultra-steep slope switch, referred to as strain effect transistor (SET), with a subthreshold swing < 0.68 mV/decade at room temperature for 7 orders of magnitude change in the source-to-drain current… read more here.
Keywords: effect transistor; ultra steep; strain effect; steep slope ... See more keywords
Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures
Sign Up to like & getrecommendations! Published in 2024 at "Nature Communications"
DOI: 10.1038/s41467-024-45482-x
Abstract: Two-dimensional (2D) semiconductor-based vertical-transport field-effect transistors (VTFETs) – in which the current flows perpendicularly to the substrate surface direction – are in the drive to surmount the stringent downscaling constraints faced by the conventional planar… read more here.
Keywords: van der; transport; vertical transport; steep slope ... See more keywords
Ultra-weak infrared light detection based on steep-slope phototransistors
Sign Up to like & getrecommendations! Published in 2025 at "Nature Communications"
DOI: 10.1038/s41467-025-59006-8
Abstract: A photodetector’s sensitivity is conventionally quantified by specific detectivity, which balances responsivity and noise. However, we reveal that the turn-on threshold power is fundamentally governed by photo-carrier injection rather than detectivity. In conventional phototransistors/diodes, incident… read more here.
Keywords: photo; detectivity; steep slope; infrared light ... See more keywords
Effective drive current in steep slope FinFET (vs. conventional FinFET)
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4998508
Abstract: With the negative capacitance (NC) effect of ferroelectric materials, a sub-60-mV/decade sub-threshold slope in a conventional field-effect transistor has been theoretically and experimentally demonstrated. In order to utilize the NC for complementary metal-oxide-semiconductor logic device… read more here.
Keywords: slope finfet; finfet conventional; drive current; current steep ... See more keywords
Ambipolar steep-slope nanotransistors with Janus MoSSe/graphene heterostructures
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac96f5
Abstract: The transfer characteristics and switching mechanism of the steep-slope transistor composed of the graphene/Janus MoSSe heterostructure are investigated by quantum transport calculation. The Schottky barrier height at the Gr/SMoSe interface and tunneling width between the… read more here.
Keywords: ambipolar steep; slope nanotransistors; slope; nanotransistors janus ... See more keywords