High‐κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low‐Power Steep‐Switching Computing Devices
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Materials"
DOI: 10.1002/adma.202312747
Abstract: Herein, a high‐quality gate stack (native HfO2 formed on 2D HfSe2) fabricated via plasma oxidation is reported, realizing an atomically sharp interface with a suppressed interface trap density (Dit ≈ 5 × 1010 cm−2 eV−1).… read more here.
Keywords: steep switching; hfse2 gate; stack; gate stack ... See more keywords
A steep-switching impact ionization-based threshold switching field-effect transistor.
Sign Up to like & getrecommendations! Published in 2023 at "Nanoscale"
DOI: 10.1039/d2nr06547a
Abstract: A steep switching device with a low subthreshold swing (SS) that overcomes the fundamental Boltzmann limit (kT/q) is required to efficiently process a continuously increasing amount of data. Recently, two-dimensional material-based impact ionization transistors with… read more here.
Keywords: ionization; ionization based; impact ionization; based threshold ... See more keywords
Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor
Sign Up to like & getrecommendations! Published in 2024 at "Nanomaterials"
DOI: 10.3390/nano14201667
Abstract: Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~1010. However, their structural complexity, such as an epitaxy process after an etch process… read more here.
Keywords: steep switching; field effect; demonstration steep; feedback field ... See more keywords