A steep-switching impact ionization-based threshold switching field-effect transistor.
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DOI: 10.1039/d2nr06547a
Abstract: A steep switching device with a low subthreshold swing (SS) that overcomes the fundamental Boltzmann limit (kT/q) is required to efficiently process a continuously increasing amount of data. Recently, two-dimensional material-based impact ionization transistors with… read more here.
Keywords: ionization; ionization based; impact ionization; based threshold ... See more keywords