Simulation based analysis of HK-Ge-Step-FinFET and its usage as inverter & SRAM
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DOI: 10.1088/1402-4896/ad5ecb
Abstract: This paper deals with comparative simulation of High-k dielectrics -Germanium Step FinFET (HK-Ge-Step-FinFET) device with reference Step FinFET. For the first time we have investigated the impact of various dimensional parameters like oxide thickness tox,… read more here.
Keywords: sram; inverter sram; noise margin; sram cell ... See more keywords