Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications
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DOI: 10.1007/s12633-020-00503-4
Abstract: AlGaN/GaN-HEMT with Single to Multi-step gate field plate is proposed in this work. The proposed device enhanced Drain current, breakdown voltage and shift in threshold voltage. The performance of proposed device is analyzed and compared… read more here.
Keywords: step gate; multi step; step; performance ... See more keywords