Microstructural and interface properties of Au/SrTiO3 (STO)/n-GaN heterojunction with an e-beam evaporated high-k STO interlayer
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DOI: 10.1016/j.jallcom.2020.153775
Abstract: Abstract This paper reviews the microstructural and electrical properties of Au/n-GaN metal/semiconductor (MS) diode with an e-beam evaporated SrTiO3(STO) as an insulating layer between the Au and n-GaN substrate. The microstructural properties of STO thin… read more here.
Keywords: beam evaporated; diode; gan heterojunction; sto ... See more keywords