Inspection of Stochastic Defects With Broadband Plasma Optical Systems for Extreme Ultraviolet (EUV) Lithography
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DOI: 10.1109/tsm.2019.2963483
Abstract: As extreme ultraviolet (EUV) lithography enters high volume manufacturing (HVM) to enable the sub-7nm scaling roadmap, characterizing and monitoring defects that print at wafer level are of critical importance to yield. This is especially true… read more here.
Keywords: stochastic defects; euv; ultraviolet euv; inspection ... See more keywords