Pulsed laser deposited stoichiometric GaSb films for optoelectronic and phase change memory applications
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DOI: 10.1016/j.mssp.2021.105965
Abstract: Abstract Phase-change memory (PCM) holds great potential in realizing the combination of DRAM-like speeds with non-volatility and large storage capacity for future electronic devices including in-memory computing. However, various (reliability) issues related to e.g. too… read more here.
Keywords: phase change; memory; gasb; stoichiometric gasb ... See more keywords