Etch-stop process for precisely controlling the vertical cavity length of GaN-based devices
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DOI: 10.1016/j.mssp.2020.105265
Abstract: Abstract In this study, an etch-stop process was developed using inductively coupled plasma reactive-ion etching for precisely controlling the vertical cavity length of GaN-based devices, such as vertical-cavity surface-emitting lasers (VCSELs) and VCSEL 2D arrays.… read more here.
Keywords: etch stop; cavity; stop process; vertical cavity ... See more keywords