Characterization of Ferroelectric Random Access Memory (FRAM) Storage Capacitors
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DOI: 10.1017/s1431927620017985
Abstract: Ferroelectric materials have unique properties including polarization hysteresis, high permittivity, and enhanced piezoelectric effects. These properties make ferroelectric materials good candidates for applications such as non-volatile memories, capacitors, and sensors. [1] Specifically, ferroelectric random access… read more here.
Keywords: random access; storage capacitors; fram storage; memory ... See more keywords