Heavy ion track straggling effect in single event effect numerical simulation of 3D stacked devices
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113853
Abstract: Abstract Numerical simulation of single event effect in 3D stacked NMOS transistor, inverter and 6T SRAM cell models were conducted using Geant4 and TCAD combined technology. Heavy ion track straggling effect was observed in 3D… read more here.
Keywords: straggling effect; effect; track straggling; ion track ... See more keywords