Strain Balancing of Metal-Organic Vapour Phase Epitaxy InAs/GaAs Quantum Dot Lasers
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DOI: 10.1109/jstqe.2017.2703666
Abstract: Incorporation of a GaAs0.8P0.2 layer allows strain balancing to be achieved in self-assembled InAs/GaAs quantum dots (QDs) grown by metal organic vapor phase epitaxy. Tuneable wavelength and high density are obtained through growth parameter optimization,… read more here.
Keywords: inas gaas; gaas quantum; gaas; metal organic ... See more keywords