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Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3022344
Abstract: In this article, we analyze the characteristics of a recently conceived steep switching device 2-D Strain FET (2D-SFET) and present its circuit implications in the context of 6T-SRAM. We discuss the dependence of 2D-SFET characteristics…
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Keywords:
sfet;
tex math;
inline formula;
fet sfet ... See more keywords