Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0143985
Abstract: It is highly challenging to grow high-quality gallium nitride (GaN) layers on silicon (Si) substrates due to the intrinsic mismatching of their structural and thermal properties. Aluminum nitride (AlN) interlayers have been used to induce… read more here.
Keywords: aln interlayer; strain gan; layer; strain ... See more keywords