Effect of thermal annealing on the strain and microstructures of in-situ phosphorus-doped Si1−xCx films grown on blanket and patterned silicon wafers
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DOI: 10.1016/j.jallcom.2019.03.015
Abstract: Abstract In this study, in-situ phosphorus-doped Si 1 − x C x layers were epitaxially grown on blanket and patterned Si wafers using reduced pressure chemical vapor deposition (RPCVD). The effect of post-growth annealing on… read more here.
Keywords: strain microstructures; thermal annealing; strain; situ phosphorus ... See more keywords