Articles with "strain relaxation" as a keyword



Photo from wikipedia

The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB‐LED Structures

Sign Up to like & get
recommendations!
Published in 2020 at "Crystal Research and Technology"

DOI: 10.1002/crat.201900215

Abstract: Strain relaxation mechanisms in AlGaN based light emitting diodes emitting in the ultraviolet B spectral range (UVB‐LEDs) grown on different AlN/sapphire templates are analyzed by combining in situ reflectivity and curvature data with transmission electron… read more here.

Keywords: strain relaxation; relaxation; relaxation mechanisms; aln templates ... See more keywords
Photo from wikipedia

Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

Sign Up to like & get
recommendations!
Published in 2017 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2016.07.144

Abstract: Abstract To integrate materials with large lattice mismatch as GaAs on silicon (Si) substrate, one possible approach, to improve the GaAs crystalline quality, is to use nanowires (NWs) technology. In the present contribution, NWs are… read more here.

Keywords: microscopy; zinc; surface; gaas ... See more keywords
Photo from wikipedia

Modulation on the magnetic and electrical properties of Fe3O4 thin films through strain relaxation

Sign Up to like & get
recommendations!
Published in 2021 at "Journal of Magnetism and Magnetic Materials"

DOI: 10.1016/j.jmmm.2021.168128

Abstract: Abstract A series of Fe3O4 thin films with growth temperature ranging from 400 to 600 °C are prepared by magnetron sputtering on α-Al2O3 (0 0 0 1). XRD and XPS measurements indicate that all the samples are pure Fe3O4… read more here.

Keywords: growth temperature; fe3o4 thin; magnetic electrical; strain relaxation ... See more keywords
Photo by miningwatch_portugal from unsplash

Strain Relaxation in “2D/2D and 2D/3D Systems”: Highly Textured Mica/Bi2Te3, Sb2Te3/Bi2Te3, and Bi2Te3/GeTe Heterostructures

Sign Up to like & get
recommendations!
Published in 2021 at "ACS Nano"

DOI: 10.1021/acsnano.0c08842

Abstract: Strain engineering as a method to control functional properties has seen in the last decades a surge of interest. Heterostructures comprising 2D-materials and containing van der Waals(-like) gaps were considered unsuitable for strain engineering. However,… read more here.

Keywords: mica bi2te3; bi2te3; bi2te3 sb2te3; strain ... See more keywords
Photo from wikipedia

Strain Relaxation in Metal Alloy Catalysts Steers the Product Selectivity of Electrocatalytic CO2 Reduction.

Sign Up to like & get
recommendations!
Published in 2022 at "ACS nano"

DOI: 10.1021/acsnano.1c11145

Abstract: Strain engineering in bimetallic alloy structures is of great interest in electrochemical CO2 reduction reactions (CO2RR), in which it simultaneously improves electrocatalytic activity and product selectivity by optimizing the binding properties of intermediates. However, a… read more here.

Keywords: selectivity; strain relaxation; co2; strain ... See more keywords
Photo by mbrunacr from unsplash

Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak

Sign Up to like & get
recommendations!
Published in 2018 at "Scientific Reports"

DOI: 10.1038/s41598-018-26725-6

Abstract: GaN based nanostructures are being increasingly used to improve the performance of various devices including light emitting diodes and lasers. It is important to determine the strain relaxation in these structures for device design and… read more here.

Keywords: binding energy; strain relaxation; exciton binding;
Photo by javardh from unsplash

Strain relaxation and ambipolar electrical transport in GaAs/InSb core-shell nanowires.

Sign Up to like & get
recommendations!
Published in 2017 at "Nanoscale"

DOI: 10.1039/c7nr05201d

Abstract: The growth, crystal structure, strain relaxation and room temperature transport characteristics of GaAs/InSb core-shell nanowires grown using molecular beam epitaxy are investigated. Due to the large lattice mismatch between GaAs and InSb of 14%, a… read more here.

Keywords: core shell; shell nanowires; gaas insb; shell ... See more keywords
Photo by enginakyurt from unsplash

Strain relaxation in monolayer MoS2 over flexible substrate

Sign Up to like & get
recommendations!
Published in 2023 at "RSC Advances"

DOI: 10.1039/d3ra01381b

Abstract: In this communication, we demonstrate uniaxial strain relaxation in monolayer (1L) MoS2 transpires through cracks in both single and double-grain flakes. Chemical vapour deposition (CVD) grown 1L MoS2 has been transferred onto polyethylene terephthalate (PET)… read more here.

Keywords: strain relaxation; relaxation monolayer; monolayer mos2; relaxation ... See more keywords
Photo by enginakyurt from unsplash

Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn

Sign Up to like & get
recommendations!
Published in 2021 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/abe1e8

Abstract: We systematically investigate the compositional uniformity, degree of strain relaxation (DSR), defect structure and surface morphology of GeSn epitaxial layers with 16% Sn, grown by low temperature molecular beam epitaxy (MBE) on Ge-buffered Si(001) substrates.… read more here.

Keywords: gesn epitaxial; strain relaxation; uniformity; epitaxial layers ... See more keywords
Photo by maxchen2k from unsplash

Influence of strain relaxation in axial [Formula: see text] nanowire heterostructures on their electronic properties.

Sign Up to like & get
recommendations!
Published in 2017 at "Nanotechnology"

DOI: 10.1088/1361-6528/aa6b73

Abstract: We present a systematic theoretical study of the influence of elastic strain relaxation on the built-in electrostatic potentials and the electronic properties of axial [Formula: see text] nanowire (NW) heterostructures. Our simulations reveal that for… read more here.

Keywords: see text; formula see; electronic properties; strain relaxation ... See more keywords
Photo by nci from unsplash

Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects studied by SEM, XRD and numerical simulations

Sign Up to like & get
recommendations!
Published in 2021 at "Journal of Applied Crystallography"

DOI: 10.1107/s1600576720014764

Abstract: V-pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X-ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and scanning electron microscopy (SEM) experimental data collected from… read more here.

Keywords: relaxation; pit defects; ingan gan; numerical simulations ... See more keywords