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Published in 2020 at "Crystal Research and Technology"
DOI: 10.1002/crat.201900215
Abstract: Strain relaxation mechanisms in AlGaN based light emitting diodes emitting in the ultraviolet B spectral range (UVB‐LEDs) grown on different AlN/sapphire templates are analyzed by combining in situ reflectivity and curvature data with transmission electron…
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Keywords:
strain relaxation;
relaxation;
relaxation mechanisms;
aln templates ... See more keywords
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Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2016.07.144
Abstract: Abstract To integrate materials with large lattice mismatch as GaAs on silicon (Si) substrate, one possible approach, to improve the GaAs crystalline quality, is to use nanowires (NWs) technology. In the present contribution, NWs are…
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Keywords:
microscopy;
zinc;
surface;
gaas ... See more keywords
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Published in 2021 at "Journal of Magnetism and Magnetic Materials"
DOI: 10.1016/j.jmmm.2021.168128
Abstract: Abstract A series of Fe3O4 thin films with growth temperature ranging from 400 to 600 °C are prepared by magnetron sputtering on α-Al2O3 (0 0 0 1). XRD and XPS measurements indicate that all the samples are pure Fe3O4…
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Keywords:
growth temperature;
fe3o4 thin;
magnetic electrical;
strain relaxation ... See more keywords
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Published in 2021 at "ACS Nano"
DOI: 10.1021/acsnano.0c08842
Abstract: Strain engineering as a method to control functional properties has seen in the last decades a surge of interest. Heterostructures comprising 2D-materials and containing van der Waals(-like) gaps were considered unsuitable for strain engineering. However,…
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Keywords:
mica bi2te3;
bi2te3;
bi2te3 sb2te3;
strain ... See more keywords
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Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.1c11145
Abstract: Strain engineering in bimetallic alloy structures is of great interest in electrochemical CO2 reduction reactions (CO2RR), in which it simultaneously improves electrocatalytic activity and product selectivity by optimizing the binding properties of intermediates. However, a…
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Keywords:
selectivity;
strain relaxation;
co2;
strain ... See more keywords
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Published in 2018 at "Scientific Reports"
DOI: 10.1038/s41598-018-26725-6
Abstract: GaN based nanostructures are being increasingly used to improve the performance of various devices including light emitting diodes and lasers. It is important to determine the strain relaxation in these structures for device design and…
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Keywords:
binding energy;
strain relaxation;
exciton binding;
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Published in 2017 at "Nanoscale"
DOI: 10.1039/c7nr05201d
Abstract: The growth, crystal structure, strain relaxation and room temperature transport characteristics of GaAs/InSb core-shell nanowires grown using molecular beam epitaxy are investigated. Due to the large lattice mismatch between GaAs and InSb of 14%, a…
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Keywords:
core shell;
shell nanowires;
gaas insb;
shell ... See more keywords
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2
Published in 2023 at "RSC Advances"
DOI: 10.1039/d3ra01381b
Abstract: In this communication, we demonstrate uniaxial strain relaxation in monolayer (1L) MoS2 transpires through cracks in both single and double-grain flakes. Chemical vapour deposition (CVD) grown 1L MoS2 has been transferred onto polyethylene terephthalate (PET)…
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Keywords:
strain relaxation;
relaxation monolayer;
monolayer mos2;
relaxation ... See more keywords
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1
Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/abe1e8
Abstract: We systematically investigate the compositional uniformity, degree of strain relaxation (DSR), defect structure and surface morphology of GeSn epitaxial layers with 16% Sn, grown by low temperature molecular beam epitaxy (MBE) on Ge-buffered Si(001) substrates.…
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Keywords:
gesn epitaxial;
strain relaxation;
uniformity;
epitaxial layers ... See more keywords
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Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa6b73
Abstract: We present a systematic theoretical study of the influence of elastic strain relaxation on the built-in electrostatic potentials and the electronic properties of axial [Formula: see text] nanowire (NW) heterostructures. Our simulations reveal that for…
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Keywords:
see text;
formula see;
electronic properties;
strain relaxation ... See more keywords
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Published in 2021 at "Journal of Applied Crystallography"
DOI: 10.1107/s1600576720014764
Abstract: V-pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X-ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and scanning electron microscopy (SEM) experimental data collected from…
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Keywords:
relaxation;
pit defects;
ingan gan;
numerical simulations ... See more keywords