Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202300811
Abstract: Efficient p‐ and n‐type in situ doping of compressively strained germanium tin (Ge1‐xSnx) semiconductor epilayers, grown by chemical vapor deposition on a standard Si(001) substrate, is demonstrated. Materials characterization results reveal unusual impact of dopants… read more here.
Keywords: situ doping; germanium tin; type; strained germanium ... See more keywords
Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-017-1913-3
Abstract: Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450… read more here.
Keywords: germanium quantum; mobility; strained germanium; pmosfets soi ... See more keywords