Study on the influence of γ-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET
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DOI: 10.1016/j.sse.2017.04.009
Abstract: Abstract The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide semiconductor field-effect transistor (NMOSFET) has been analyzed under γ-ray radiation. The variation of electrical characteristics of the uniaxial strained Si nanometer NMOSFET has… read more here.
Keywords: dose radiation; effect; uniaxial strained; total dose ... See more keywords