Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy
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DOI: 10.1088/1361-6641/aa8a87
Abstract: A strained Si/relaxed SiGe heterostructure grown on Si(110) substrate is attractive as a platform for high-hole-mobility Si-based electronic devices. To improve the electrical property, a smoother surface is desirable. In this study, we investigated surface… read more here.
Keywords: strained relaxed; relaxed sige; source molecular; solid source ... See more keywords