Quantification of local strain distributions in nanoscale strained SiGe FinFET structures
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4991472
Abstract: Strain within nanoscale strained SiGe FinFET structures has been investigated using a combination of X-ray diffraction and transmission electron microscopy-based nanobeam diffraction (NBD) techniques to reveal the evolution of the stress state within the FinFETs.… read more here.
Keywords: nanoscale strained; sige finfet; finfet structures; stress ... See more keywords
Design and optimization of stress/strain in GAA nanosheet FETs for improved FOMs at sub-7 nm nodes
Sign Up to like & getrecommendations! Published in 2023 at "Physica Scripta"
DOI: 10.1088/1402-4896/accfcc
Abstract: Stress/strain engineering techniques are employed to boost the performance of Gate-all-around (GAA) vertically stacked nanosheet field-effect transistors (NSFETs) for 7 nm technology nodes and beyond. In this work, we report on the 3D numerical simulation… read more here.
Keywords: stress; stress strain; strain; strained sige ... See more keywords
Capacitive Modulator Design Optimization Using Si and Strained-SiGe for Datacom Applications
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Journal of Selected Topics in Quantum Electronics"
DOI: 10.1109/jstqe.2020.3028447
Abstract: Silicon photonics has become an industrial reality for datacom applications. Nevertheless, as Si suffers from a low electro-optic effect, commercial modulators are few-mm long. The efficiency can be enhanced by using strained-SiGe or by using… read more here.
Keywords: using strained; strained sige; datacom applications; capacitive modulator ... See more keywords
Complete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substrates
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Express"
DOI: 10.35848/1882-0786/add83c
Abstract: We propose a novel method to completely eliminate cracks, which are unavoidably generated in strained SiGe(111) layers grown on Ge(111). We perform mesa-patterning of the Si(111) substrate first, and subsequently grow the strained SiGe/Ge(111) on… read more here.
Keywords: strained sige; patterning 111; crack elimination; sige 111 ... See more keywords