Impact of P/E Stress on Trap Profiles in Bandgap-engineered Tunneling Oxide of 3D NAND Flash Memory
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DOI: 10.1109/access.2022.3182397
Abstract: The quantitative characteristics of traps created in the bandgap-engineered tunneling oxide (BE-TOX) layer and block layer after program/erase (P/E) stress-cycling in a 3D NAND flash memory were investigated. The trap spectroscopy by charge injection and… read more here.
Keywords: stress; nand flash; tunneling oxide; bandgap engineered ... See more keywords