Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors.
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DOI: 10.1021/acsami.0c17317
Abstract: Because of the excellent electrical properties, III-V semiconductor nanowires are promising building blocks for next-generation electronics; however, their rich surface states inevitably contribute large amounts of charge traps, leading to gate bias stress instability and… read more here.
Keywords: stress instability; gate bias; hysteresis; bias stress ... See more keywords