Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor
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DOI: 10.1109/tdmr.2025.3548038
Abstract: Ferroelectric transistors can function as non-volatile memory devices with single-bit, multi-bit, and analog capabilities. State modulation is achieved by programming and erasing with bipolar pulse voltages, while a series of unipolar pulses enable synaptic potentiation… read more here.
Keywords: pulse voltage; stress reliability; reliability ferroelectric; stress ... See more keywords