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Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2019.2908055
Abstract: This paper analyses the neutron irradiation impact on the electrical performances of unstressed, ON-state, OFF-state, and negative gate bias (NGB) stressed AlInN/GaN HEMTs. These irradiations have resulted in the creation of electron traps that are…
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Keywords:
gan hemts;
alinn gan;
stressed alinn;
neutron irradiation ... See more keywords