Stretched tunnelling body contact structure for suppressing the FBE in a vertical cell DRAM
Sign Up to like & getrecommendations! Published in 2019 at "Electronics Letters"
DOI: 10.1049/el.2019.2541
Abstract: Vertical cell transistor is necessary to drastically reduce the chip size of the dynamic random access memory. This structure has a great advantage in terms of shrinkage, but it also has the disadvantage of increasing… read more here.
Keywords: state current; vertical cell; structure; stretched tunnelling ... See more keywords