The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device
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DOI: 10.1016/j.jcrysgro.2016.11.003
Abstract: Abstract Rapid thermal annealing (RTA) has been performed on InGaAsP solar cells with the bandgap energy of 1 eV grown by molecular beam epitaxy. With the employment of RTA under an optimized condition, the open voltage… read more here.
Keywords: type ingaasp; rapid thermal; striking influence; influence rapid ... See more keywords