Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy
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DOI: 10.1016/j.tsf.2020.138125
Abstract: Abstract Selective–area growth of cubic GaN (c–GaN) layers grown on stripe–patterned GaAs (100) substrates by metalorganic vapor phase epitaxy was investigated. The formation of hexagonal phase was examined along with the growth morphology and the… read more here.
Keywords: phase; growth; stripe pattern; selective area ... See more keywords