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Published in 2020 at "Microwave and Optical Technology Letters"
DOI: 10.1002/mop.32525
Abstract: Strong and narrowband terahertz (THz) radiation is obtained from a GaAs‐based pseudomorphic high‐electron‐mobility transistor (pHEMT). The radiation properties with respect to the bias conditions and operating temperature are extensively characterized. The maximum emission power is…
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Keywords:
phemt;
strong narrowband;
terahertz;
radiation ... See more keywords