On the structural and bandgap properties of mist-CVD-grown κ-Ga2O3 post continuous temperature annealing
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DOI: 10.1063/5.0233281
Abstract: We investigate the continuous annealing of orthorhombic κ-Ga2O3 films on AlN/c-plane sapphire templates grown by Mist Chemical Vapor Deposition (mist-CVD) using in situ high-temperature x-ray diffraction (HT-XRD). Increasing the annealing temperature from 400 to 1100 °C… read more here.
Keywords: temperature; structural bandgap; ga2o3; mist cvd ... See more keywords