Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2
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DOI: 10.1134/s1063785020100144
Abstract: Si nanophases and nanolayers were obtained by bombardment with Ar+ ions followed by annealing at various depths of silicon oxide. As ion energy E0 varies from 10 to 25 keV, the average depth of Si… read more here.
Keywords: crystal structure; structure band; band gap; various depths ... See more keywords