Extraction of Preisach model parameters for fluorite-structure ferroelectrics and antiferroelectrics
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DOI: 10.1038/s41598-021-91492-w
Abstract: Flourite-structure ferroelectrics (FEs) and antiferroelectrics (AFEs) such as HfO2 and its variants have gained copious attention from the semiconductor community, because they enable complementary metal-oxide-semiconductor (CMOS)-compatible platforms for high-density, high-performance non-volatile and volatile memory technologies.… read more here.
Keywords: usepackage; structure; fluorite structure; preisach model ... See more keywords