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Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2018.01.274
Abstract: Abstract This paper investigates the effect of counter doping in an n-Tunneling Field Effect Transistor(nTFET). Effect of various pocket lengths between the source and the channel was investigated. A double gate structure with a 2 nm…
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Keywords:
device performance;
counter doping;
structure pnpn;
hetero structure ... See more keywords