Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers
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DOI: 10.1134/s1063782619020064
Abstract: The formation features of a low-temperature Ta/Al-based ohmic contact to Al0.25Ga0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 Ω… read more here.
Keywords: low temperature; heteroepitaxial structures; temperature based; structures silicon ... See more keywords